(China (Mainland))
Product Summary
The JAN2N2219A is an NPN switching silicon transistor.
Parametrics
JAN2N2219A absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 50 Vdc; (2)Collector-Base Voltage, VCBO: 75 Vdc; (3)Emitter-Base Voltage, VEBO: 6.0 Vdc; (4)Collector Current, IC: 800 mAdc; (5)Total Power Dissipation @ TA = +25℃, PT: 0.8W; @ TC = +25℃, PT: 3.0 W; (6)Operating & Storage Junction Temp. Range, Top, Tstg: -55 to +200℃.
Features
JAN2N2219A features: (1)Collector-Emitter Breakdown Voltage, IE = 10 mAdc, V(BR)CEO: 50Vdc; (2)Emitter-Base Cutoff Current, VEB = 6.0 Vdc, IEBO: 10ηAdc; (3)Collector-Base Cutoff Current, mVCE = 50 Vdc, ICES: 10ηAdc.
Diagrams
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 JAN2N2222 |
Other |
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Data Sheet |
Negotiable |
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JAN2N2222A |
Other |
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Data Sheet |
Negotiable |
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JAN2N2369 |
Other |
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Data Sheet |
Negotiable |
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JAN2N2369A |
Other |
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Data Sheet |
Negotiable |
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JAN2N2608 |
Other |
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Data Sheet |
Negotiable |
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JAN2N2905A |
ON Semiconductor |
Transistors Bipolar (BJT) JAN2N2905A |
Data Sheet |
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