(China (Mainland))
Product Summary
The JAN2N930A is an NPN low power silicon transistor.
Parametrics
JAN2N930A absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 80 Vdc; (2)Collector-Base Voltage, VCBO: 120 Vdc; (3)Emitter-Base Voltage, VEBO: 7.0 Vdc; (4)Collector-Emitter Voltage (RBE = 10 W), VCER: 100 Vdc; (5)Collector Current, IC: 500 mAdc; (6)Operating & Storage Junction Temperature Range, TJ, Tsrg: -65 to +200℃.
Features
JAN2N930A features: (1)Forward-Current Transfer Ratio, IC = 0.1 mAdc, VCE = 10 Vdc, hFE: 20V; IC = 10 mAdc, VCE = 10 Vdc, hFE: 35V; IC = 150 mAdc, VCE = 10 Vdc, hFE: 40 120V; (2)Collector-Emitter Saturation Voltage, IC = 150 mAdc, IB = 15 mAdc, VCE(sat): 5.0Vdc; (3)Base-Emitter Voltage, IC = 150 mAdc, IB = 15 mAdc, VBE(sat) 1.3Vdc.
Diagrams
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JAN2N2905A |
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